Rohm develops GaN technology to improve IoT power supplies

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Rohm develops GaN technology to improve IoT power supplies
(Source: Rohm)

Rohm, a Japanese electronics firm, has developed gallium nitride (GaN) technology for power supplies used in industrial equipment such as base stations and data centers, as well as Internet of Things (IoT) connectivity devices.

In recent years, improving power conversion efficiency and reducing size have become key social challenges that necessitate developments in the power device sector, owing to the increased demand for server systems in response to the expanding number of IoT devices.

GaN devices are projected to help to decrease the power consumption of various power supplies and better downsizing peripheral components due to their higher switching characteristics and lower on-resistance than silicon devices.

Rohm has created GaN devices that can function at higher frequencies in the medium-voltage range, in addition to mass-producing SiC (silicon carbide) and silicon devices.


These products feature a unique architecture that increases the rated gate-source voltage from 6V to 8V. As a result, even if overshoot voltages above 6V occur during switching, degradation is prevented, contributing to increased design margin and dependability in power supply circuits.

The GNE10xxTB series is available in modular packaging that includes heat dissipation and a big current capability, making it easier to handle during the installation process.

Rohm has trademarked the name EcoGaN for its GaN devices that help with energy conservation and miniaturization and is planning to expand the range with devices that boost performance. Rohm will continue to develop control ICs that use analog power supply technology, such as its Nano Pulse Control, as well as modules that contain these ICs, as well as power products that help to create a more sustainable society by improving GaN device performance.

This year, the Japanese Ministry of Economy, Trade, and Industry (Meti) set a goal for new data centers to save 30% on energy by 2030. However, because data centers have become an important part of social infrastructure, system performance must be not only energy-efficient but also durable and stable.


In addition, Rohm has created a GaN device with an industry-leading gate withstand voltage of 8V, ensuring robustness and stability while reducing energy consumption. Starting with these products, Rohm claims it will continue to improve power supply efficiency in power sources by combining proprietary Nano Pulse Control analog power supply technology, resulting in a technological trend that will help the semiconductor and telecommunications industries become carbon neutral by 2040.

EcoGaN refers to GaN devices that help with energy-saving and miniaturization by enhancing GaN’s low on-resistance and high-speed switching properties, with the goal of lowering application power consumption, peripheral components, and design load, as well as the number of parts required.
Rohm manufactures products in Japan, Korea, Malaysia, Thailand, the Philippines, and China. Rohm firms include Lapis Technology (previously Oki Semiconductor), SiCrystal, and Kionix.

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